Transient processes in a Ge/Si hetero-nanocrystal p-channel memory
نویسندگان
چکیده
Transient processes of Ge/Si hetero-nanocrystal floating gate memories are simulated numerically. Compared with Si nanocrystal memories, Ge/Si hetero-nanocrystal memories show similar writing and erasing efficiency with a weaker writing saturation and markedly improved retention characteristics. 2006 Elsevier Ltd. All rights reserved. PACS: 72.20.Jv; 73.21.La; 73.90.+f; 74.50.+r
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